AOT296L/aob296l 100v n-channel mosfet general description product summary v ds i d (at v gs =10v) 70a r ds(on) (at v gs =10v) < 10m w (< 9.7m w * ) r ds(on) (at v gs =6v) < 12.5m w (< 12.2m w * ) 100% uis tested 100% r g tested symbol the AOT296L/aob296l uses trench mosfet technology that is uniquely optimized to provide th e most efficient high frequency switching performance. bot h conduction and switching power losses are minimized due to an extremely low combination of r ds(on) , ciss and coss. this device is ideal for boost converters and synchronous rectifiers for consumer, telecom, indus trial power supplies and led backlighting. maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 100v g d s to220 top view bottom view g g s d d s d d to-263 d 2 pak top view bottom view d d s g g s symbol v ds v gs i dm i as e as t j , t stg symbol t 10s steady-state steady-state r q jc * surface mount package to263 maximum junction-to-ambient a c/w r q ja 12 48 15 v 20 gate-source voltage drain-source voltage 100 v maximum units parameter mj avalanche current c 7.5 continuous drain current 80 9.5 a 40 avalanche energy l=0.1mh c a t a =25c i dsm a t a =70c i d 70 50 t c =25c t c =100c 180 pulsed drain current c continuous drain current g w power dissipation a p dsm w t a =70c 107 1.3 t a =25c t c =25c 2.1 54 t c =100c power dissipation b p d maximum junction-to-case c/w c/w maximum junction-to-ambient a d 1.1 60 1.4 units junction and storage temperature range -55 to 175 c thermal characteristics parameter typ max prelim: sep. 2012 www.aosmd.com page 1 of 6
AOT296L/aob296l symbol min typ max units bv dss 100 v v ds =100v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 2.3 2.9 3.4 v i d(on) 180 a 8.2 10 t j =125c 14.2 17.2 g fs 62 s v sd 0.7 1 v i s 70 a c iss 2785 pf c oss 238 pf c rss 12 pf r g 0.25 0.55 0.85 w q 37 52 nc total gate charge v gs =6v, i d =20a to263 m w 12.2 9.4 forward transconductance maximum body-diode continuous current g input capacitance output capacitance dynamic parameters gate resistance v gs =0v, v ds =0v, f=1mhz on state drain current v gs =10v, v ds =5v v gs =10v, i d =20a switching parameters r ds(on) static drain-source on-resistance diode forward voltage reverse transfer capacitance v gs =0v, v ds =50v, f=1mhz m w i s =1a,v gs =0v v ds =5v, i d =20a to220 v ds =v gs i d =250 m a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a zero gate voltage drain current drain-source breakdown voltage i d =250 m a, v gs =0v v ds =0v, v gs =20v gate-body leakage current v gs =6v, i d =20a to220 9.7 12.5 m w 7.9 9.7 m w v gs =10v, i d =20a to263 q g(10v) 37 52 nc q g(4.5v) 16.5 24 nc q gs 11.5 nc q gd 5 nc t d(on) 13 ns t r 8.5 ns t d(off) 29 ns t f 4 ns t rr 35 ns q rr 210 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. total gate charge i f =20a, di/dt=500a/ m s body diode reverse recovery charge body diode reverse recovery time i f =20a, di/dt=500a/ m s turn-on delaytime turn-on rise time turn-off delaytime v gs =10v, v ds =50v, r l =2.5 w , r gen =3 w total gate charge turn-off fall time gate source charge gate drain charge v gs =10v, v ds =50v, i d =20a a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and th e maximum temperature of 175 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =175 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175 c. the soa curve provides a single pulse rating. g. the maximum current limited by package. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. prelim: sep. 2012 www.aosmd.com page 2 of 6
aot2608l/aob2608l typical electrical and thermal characteristics 17 52 10 0 18 0 20 40 60 80 100 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 4 6 8 10 12 14 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =10v i d =20a v gs =6v i d =20a 25 c 125 c v ds =5v v gs =10v 0 20 40 60 80 100 120 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) 6v 5v 10v v gs =4.0v 4.5v v gs =6v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 2 6 10 14 18 22 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c rev 1 : mar. 2012 www.aosmd.com page 3 of 6
aot2608l/aob2608l typical electrical and thermal characteristics 17 52 10 0 18 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 3500 0 20 40 60 80 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 100 200 300 400 500 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to-ca se c oss c rss v ds =50v i d =20a t j(max) =175 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased 10 m s 10ms 1ms dc r ds(on) limited t j(max) =175 c t c =25 c 100 m s 40 (note f) 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse safe operating area (note f) r q jc =1.4 c/w rev 1 : mar. 2012 www.aosmd.com page 4 of 6
aot2608l/aob2608l typical electrical and thermal characteristics 17 52 10 0 18 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 power dissipation (w) t case (c) figure 13: power de-rating (note f) 0 10 20 30 40 50 60 70 80 0 25 50 75 100 125 150 175 current rating i d (a) t case (c) figure 14: current de - rating (note f) 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 15: single pulse power rating junction - to - t a =25 c 10 100 1000 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) t a =25 c t a =150 c t a =100 c t a =125 c 40 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 14: current de - rating (note f) figure 15: single pulse power rating junction - to - ambient (note h) r q ja =60 c/w rev 1 : mar. 2012 www.aosmd.com page 5 of 6
aot2608l/aob2608l - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev 1 : mar. 2012 www.aosmd.com page 6 of 6
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